Moisture Resistant ESD Safe MOS Capacitors 470 pF 30V Single Layer Chip for Broadband RF Decoupling

Moisture Resistant ESD Safe MOS Capacitor 470 pF 30V Single Layer Chip for Broadband RF Decoupling

Summary: The HMR471S30V500 is a single-layer MOS chip capacitor rated 470 pF / 30 V DC, fabricated on float-zone silicon with a dense thermal SiO&sub2; dielectric and a TiW-Pt-Au metallization system. It combines robust moisture performance (MSL 1, no bulk absorption) with electrostatic robustness and very low parasitic inductance, making it a single-layer MOS capacitor option for broadband RF decoupling in humid, outdoor and automotive environments. Capacitance value, chip geometry, and packaging are customizable.

Key Specifications at a Glance

• Capacitance: 470 pF ±10% (tolerance options ±5%)
• Rated voltage: 30 V DC, dielectric strength >100 V DC
• Intrinsic chip ESL: <0.05 nH (single-layer vertical current path)
• Temperature coefficient: +35 ppm/°C, −55 °C to +125 °C
• Moisture: MSL 1; biased-humidity drift <0.1% over 1000 h
• ESD: class 0 (HBM); silver-free metallization
• Chip size: 0.50 × 0.50 × 0.15 mm; wire bondable / eutectic die attach

Full Electrical Specifications (T = 25 °C unless noted)

Typical Applications

• Outdoor remote radio units (RRU) exposed to condensation and thermal cycling
• Automotive electronic control units (road salt, humidity, temperature swings)
• Industrial IoT sensor nodes in unconditioned factory or agricultural environments
• Marine and coastal communication electronics in salt-laden air
• Medical wearable electronics subject to perspiration and body-worn humidity

Moisture resistant ESD safe MOS capacitor

470 pF 30V MOS capacitor

Single layer chip broadband RF decoupling

Moisture Resistant ESD Safe MOS Capacitors 470 pF 30V Single Layer Chip for Broadband RF Decoupling Images